FDP8440 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
auf Bestellung 17634 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 4.12 EUR |
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Technische Details FDP8440 Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V.
Weitere Produktangebote FDP8440 nach Preis ab 2.68 EUR bis 4.26 EUR
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FDP8440 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 100A TO-220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V |
auf Bestellung 26190 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP8440 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 40V 277A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP8440 | Hersteller : FAIRCHILD |
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auf Bestellung 795 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDP8440 | Hersteller : ON Semiconductor |
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auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
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FDP8440 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 40V 277A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FDP8440 | Hersteller : onsemi |
Description: MOSFET N-CH 40V 100A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDP8440 | Hersteller : onsemi / Fairchild |
MOSFETs 40V N-Channel Power Trench |
Produkt ist nicht verfügbar |