![FDP120N10 FDP120N10](https://www.mouser.com/images/onsemiconductor/lrg/TO2203-340AT_t.jpg)
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.08 EUR |
10+ | 3.27 EUR |
100+ | 2.69 EUR |
500+ | 2.24 EUR |
800+ | 1.97 EUR |
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Technische Details FDP120N10 onsemi / Fairchild
Description: MOSFET N-CH 100V 74A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 74A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5605 pF @ 25 V.
Weitere Produktangebote FDP120N10 nach Preis ab 1.94 EUR bis 4.1 EUR
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FDP120N10 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 74A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5605 pF @ 25 V |
auf Bestellung 1256 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP120N10 | Hersteller : ON Semiconductor |
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