auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
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1+ | 3.41 EUR |
10+ | 2.75 EUR |
100+ | 2.25 EUR |
500+ | 1.92 EUR |
800+ | 1.54 EUR |
2400+ | 1.49 EUR |
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Technische Details FDP053N08B-F102 onsemi / Fairchild
Description: MOSFET N-CH 80V 75A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V, Power Dissipation (Max): 146W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V.
Weitere Produktangebote FDP053N08B-F102 nach Preis ab 1.62 EUR bis 3.43 EUR
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FDP053N08B-F102 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V Power Dissipation (Max): 146W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V |
auf Bestellung 1540 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP053N08B-F102 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 80V 120A 3-Pin(3+Tab) TO-220 Tube |
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