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FDMS86150ET100 onsemi / Fairchild
auf Bestellung 3455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.97 EUR |
10+ | 6.39 EUR |
25+ | 6.2 EUR |
100+ | 5.86 EUR |
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Technische Details FDMS86150ET100 onsemi / Fairchild
Description: MOSFET N-CH 100V 16A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc), Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V, Power Dissipation (Max): 3.3W (Ta), 187W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V.
Weitere Produktangebote FDMS86150ET100 nach Preis ab 6.09 EUR bis 10.74 EUR
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FDMS86150ET100 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
auf Bestellung 5273 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDMS86150ET100 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56 Mounting: SMD Case: Power56 Kind of package: reel; tape Power dissipation: 187W Gate charge: 62nC Polarisation: unipolar Drain current: 90A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 9.1mΩ Pulsed drain current: 617A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS86150ET100 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
Produkt ist nicht verfügbar |
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FDMS86150ET100 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56 Mounting: SMD Case: Power56 Kind of package: reel; tape Power dissipation: 187W Gate charge: 62nC Polarisation: unipolar Drain current: 90A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 9.1mΩ Pulsed drain current: 617A |
Produkt ist nicht verfügbar |