FDMS7672 ON Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V, Power Dissipation (Max): 2.5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power56, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2960 pF @ 15 V.