FDMS7602S onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 12A/17A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 12A/17A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 17A
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.02 EUR |
6000+ | 0.97 EUR |
9000+ | 0.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS7602S onsemi
Description: MOSFET 2N-CH 30V 12A/17A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 12A, 17A, Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power56.
Weitere Produktangebote FDMS7602S nach Preis ab 0.97 EUR bis 2.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMS7602S | Hersteller : onsemi / Fairchild | MOSFETs 30V Dual N-Channel PowerTrench |
auf Bestellung 2084 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7602S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 12A/17A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 17A Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 9880 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7602S | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 12A/17A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS7602S | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 12A/17A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS7602S | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 12A/17A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS7602S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 12/7.2mΩ Mounting: SMD Gate charge: 28/46nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS7602S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 12/7.2mΩ Mounting: SMD Gate charge: 28/46nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |