FDMS5362L_F085 Fairchild Semiconductor
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Technische Details FDMS5362L_F085 Fairchild Semiconductor
Description: MOSFET N-CH 60V 17.6A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 17.6A, 10V, Power Dissipation (Max): 41.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: Power56, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote FDMS5362L_F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMS5362L_F085 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 60V 17.6A POWER56 |
auf Bestellung 3317 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS5362L_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 60V 17.6A POWER56 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS5362L-F085 | Hersteller : ON Semiconductor / Fairchild |
MOSFET N-Channel Power Trench MOSFET |
auf Bestellung 1466 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS5362L-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 17.6A Automotive 8-Pin Power 56 EP T/R |
Produkt ist nicht verfügbar |
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| FDMS5362LF085 | Hersteller : Fairchild Semiconductor |
Description: N-CHANNEL POWER TRENCH MOSFET Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 17.6A, 10V Power Dissipation (Max): 41.7W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDMS5362L-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 17.6A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 17.6A, 10V Power Dissipation (Max): 41.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 878 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |