FDMS3672 ON Semiconductor
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.19 EUR |
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Technische Details FDMS3672 ON Semiconductor
Description: MOSFET N-CH 100V 7.4A/22A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (5x6), Power56, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 50 V.
Weitere Produktangebote FDMS3672 nach Preis ab 2.11 EUR bis 4.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMS3672 | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 7.4A/22A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7.4A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3672 | Hersteller : onsemi / Fairchild |
MOSFETs 100V N-Ch UltraFET PowerTrench MOSFET |
auf Bestellung 16591 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3672 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 7.4A/22A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7.4A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 50 V |
auf Bestellung 7588 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS3672 | Hersteller : Fairchild |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMS3672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 7.4A 8-Pin MLP EP T/R |
Produkt ist nicht verfügbar |
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FDMS3672 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 100V 7.4A 8-Pin MLP EP T/R |
Produkt ist nicht verfügbar |
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| FDMS3672 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 30A Power dissipation: 78W Case: Power56 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMS3672 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 30A; 78W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 30A Power dissipation: 78W Case: Power56 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |