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FDMS10C4D2N onsemi
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Description: MOSFET N-CH 100V 17A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.15 EUR |
6000+ | 2.07 EUR |
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Technische Details FDMS10C4D2N onsemi
Description: MOSFET N-CH 100V 17A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V.
Weitere Produktangebote FDMS10C4D2N nach Preis ab 2.08 EUR bis 4.75 EUR
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FDMS10C4D2N | Hersteller : onsemi / Fairchild |
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auf Bestellung 3080 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS10C4D2N | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 50 V |
auf Bestellung 13960 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS10C4D2N | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDMS10C4D2N | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 510A; 125W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 510A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS10C4D2N | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 510A; 125W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 48A Pulsed drain current: 510A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |