auf Bestellung 5000 Stücke:
Lieferzeit 647-651 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.64 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.72 EUR |
| 5000+ | 0.66 EUR |
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Technische Details FDME1034CZT onsemi / Fairchild
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V, Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-MicroFET (1.6x1.6).
Weitere Produktangebote FDME1034CZT nach Preis ab 0.68 EUR bis 1.64 EUR
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FDME1034CZT | Hersteller : onsemi |
 Description: MOSFET N/P-CH 20V 3.8A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
auf Bestellung 4269 Stücke: Lieferzeit 10-14 Tag (e) |
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FDME1034CZT | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 3.8A/2.6A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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FDME1034CZT | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 3.8A/2.6A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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FDME1034CZT | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 20V 3.8A/2.6A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| FDME1034CZT | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; -20/20V; -2.6/3.8A; 1.4W; uDFN6 Mounting: SMD Power dissipation: 1.4W Gate charge: 7.7/4.2nC Polarisation: unipolar Drain current: -2.6/3.8A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: uDFN6 On-state resistance: 530/160mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDME1034CZT | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
Produkt ist nicht verfügbar |
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| FDME1034CZT | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; -20/20V; -2.6/3.8A; 1.4W; uDFN6 Mounting: SMD Power dissipation: 1.4W Gate charge: 7.7/4.2nC Polarisation: unipolar Drain current: -2.6/3.8A Kind of channel: enhanced Drain-source voltage: -20/20V Type of transistor: N/P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: uDFN6 On-state resistance: 530/160mΩ |
Produkt ist nicht verfügbar |