FDMC8882 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.61 EUR |
6000+ | 0.58 EUR |
9000+ | 0.56 EUR |
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Technische Details FDMC8882 onsemi
Description: MOSFET N-CH 30V 10.5A/16A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V, Power Dissipation (Max): 2.3W (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V.
Weitere Produktangebote FDMC8882 nach Preis ab 0.44 EUR bis 1.49 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDMC8882 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R |
auf Bestellung 2101 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8882 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R |
auf Bestellung 2101 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8882 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 10.5A/16A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V |
auf Bestellung 34937 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8882 | Hersteller : onsemi / Fairchild | MOSFET 30V N-Channel Power Trench 174 MOSFET |
auf Bestellung 16322 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8882 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R |
Produkt ist nicht verfügbar |
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FDMC8882 | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 10.5A 8-Pin Power 33 EP T/R |
Produkt ist nicht verfügbar |
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FDMC8882 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC8882 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |