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FDMC8878 ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
97+ | 1.63 EUR |
112+ | 1.35 EUR |
137+ | 1.06 EUR |
500+ | 0.9 EUR |
1000+ | 0.72 EUR |
3000+ | 0.65 EUR |
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Technische Details FDMC8878 ON Semiconductor
Description: MOSFET N-CH 30V 9.6A/16.5A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V, Power Dissipation (Max): 2.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V.
Weitere Produktangebote FDMC8878 nach Preis ab 0.93 EUR bis 2.36 EUR
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FDMC8878 | Hersteller : ON Semiconductor |
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auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8878 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
auf Bestellung 5019 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8878 | Hersteller : onsemi / Fairchild |
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auf Bestellung 25534 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8878 | Hersteller : ON Semiconductor |
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auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC8878 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 16.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9.6A, 10V Power Dissipation (Max): 2.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8878 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 16.5A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: WDFN8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC8878 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 16.5A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: WDFN8 |
Produkt ist nicht verfügbar |