FDMC86160ET100 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.86 EUR |
| 6000+ | 1.79 EUR |
| 9000+ | 1.73 EUR |
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Technische Details FDMC86160ET100 onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V.
Weitere Produktangebote FDMC86160ET100 nach Preis ab 1.81 EUR bis 4.15 EUR
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FDMC86160ET100 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 9A/43A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V |
auf Bestellung 12647 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86160ET100 | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Channel Power Trench MOSFET |
auf Bestellung 5606 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86160ET100 | Hersteller : ONSEMI |
Description: ONSEMI - FDMC86160ET100 - Leistungs-MOSFET, Gatter, geschirmt, n-Kanal, 100 V, 43 A, 0.0112 ohm, PQFN, Oberflächenmontage tariffCode: 85413000 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 43A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.9V euEccn: NLR Verlustleistung: 65W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0112ohm |
auf Bestellung 5328 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86160ET100 | Hersteller : ON Semiconductor / Fairchild |
MOSFET FET 100V 14 MOHM PQFN33 |
auf Bestellung 2174 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86160ET100 | Hersteller : ONSEMI |
Description: ONSEMI - FDMC86160ET100 - Leistungs-MOSFET, Gatter, geschirmt, n-Kanal, 100 V, 43 A, 0.0112 ohm, PQFN, Oberflächenmontage tariffCode: 85413000 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 43A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.9V euEccn: NLR Verlustleistung: 65W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0112ohm |
auf Bestellung 5328 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC86160ET100 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 9A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC86160ET100 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Pulsed drain current: 204A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMC86160ET100 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Pulsed drain current: 204A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |