![FDMC86139P FDMC86139P](https://www.mouser.com/images/fairchildsemiconductor/lrg/MLP_Power33_33x33_8_DSL.jpg)
FDMC86139P onsemi / Fairchild
auf Bestellung 57318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.85 EUR |
10+ | 2.29 EUR |
100+ | 1.88 EUR |
250+ | 1.85 EUR |
500+ | 1.58 EUR |
1000+ | 1.34 EUR |
3000+ | 1.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC86139P onsemi / Fairchild
Description: MOSFET P-CH 100V 4.4A/15A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.4A, 10V, Power Dissipation (Max): 2.3W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 50 V.
Weitere Produktangebote FDMC86139P nach Preis ab 1.36 EUR bis 2.87 EUR
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FDMC86139P | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.4A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 50 V |
auf Bestellung 2102 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86139P | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.4A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 50 V |
auf Bestellung 2102 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86139P Produktcode: 183309 |
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FDMC86139P | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDMC86139P | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDMC86139P | Hersteller : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8 Kind of package: reel; tape Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.104Ω Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC86139P | Hersteller : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8 Kind of package: reel; tape Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.104Ω Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 |
Produkt ist nicht verfügbar |