Technische Details FDD9511L-F085 ON Semiconductor
Description: MOSFET P-CH 40V 25A DPAK, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V, Power Dissipation (Max): 48.4W (Tj), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
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FDD9511L-F085 | Hersteller : ON Semiconductor |
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FDD9511L-F085 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V Power Dissipation (Max): 48.4W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDD9511L-F085 | Hersteller : onsemi |
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Produkt ist nicht verfügbar |