FDD86081-F085 ON Semiconductor
Hersteller: ON SemiconductorN Channel Power Trench MOSFET 100 V, 21 A, 31.5 m N Channel Power Trench MOSFET 100 V, 21 A, 31.5 m
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Technische Details FDD86081-F085 ON Semiconductor
Description: MOSFET N-CH 100V 21A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21.4A (Tc), Rds On (Max) @ Id, Vgs: 31.5mOhm @ 6A, 10V, Power Dissipation (Max): 3W (Ta), 31.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 36µA, Supplier Device Package: D-PAK (TO-252), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 493 pF @ 50 V, Qualification: AEC-Q101.
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FDD86081-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 21A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21.4A (Tc) Rds On (Max) @ Id, Vgs: 31.5mOhm @ 6A, 10V Power Dissipation (Max): 3W (Ta), 31.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 36µA Supplier Device Package: D-PAK (TO-252) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 493 pF @ 50 V Qualification: AEC-Q101 |
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