Technische Details FDD6670AS FAIRCHILD
Description: MOSFET N-CH 30V 76A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 13.8A, 10V, Power Dissipation (Max): 70W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V.
Weitere Produktangebote FDD6670AS
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDD6670AS | Hersteller : FAIRCHILD |
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auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD6670AS | Hersteller : FAIRCHILD |
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auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD6670AS | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDD6670AS | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 13.8A, 10V Power Dissipation (Max): 70W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 15 V |
Produkt ist nicht verfügbar |