FDD14AN06LA0 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 9.5A/50A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Description: MOSFET N-CH 60V 9.5A/50A TO252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
auf Bestellung 56284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
129+ | 3.75 EUR |
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Technische Details FDD14AN06LA0 Fairchild Semiconductor
Description: MOSFET N-CH 60V 9.5A/50A TO252AA, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V.
Weitere Produktangebote FDD14AN06LA0
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FDD14AN06LA0 | Hersteller : FAIRCHILD | 07+ TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD14AN06LA0 | Hersteller : FAIRCHILD | D-PAK/ TO-252 |
auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD14AN06LA0 | Hersteller : FAIRCHILD | TO-252 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD14AN06LA0 | Hersteller : fairchild | to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD14AN06LA0 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 9.5A/50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDD14AN06LA0 | Hersteller : onsemi / Fairchild | MOSFET N-Channel PowerTrench |
Produkt ist nicht verfügbar |