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FDC633N Fairchild Semiconductor
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Description: MOSFET N-CH 30V 5.2A SUPERSOT6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V
auf Bestellung 1219598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
386+ | 1.26 EUR |
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Technische Details FDC633N Fairchild Semiconductor
Description: MOSFET N-CH 30V 5.2A SUPERSOT6, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V.
Weitere Produktangebote FDC633N
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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FDC633N | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDC633N | Hersteller : onsemi / Fairchild |
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Produkt ist nicht verfügbar |