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FDB8860-F085 Fairchild Semiconductor
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Description: FDB8860 - N-CHANNEL LOGIC LEVEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12585 pF @ 15 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
174+ | 2.86 EUR |
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Technische Details FDB8860-F085 Fairchild Semiconductor
Description: FDB8860 - N-CHANNEL LOGIC LEVEL, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V, Power Dissipation (Max): 254W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12585 pF @ 15 V.
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FDB8860-F085 | Hersteller : onsemi / Fairchild |
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