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FDB86366-F085 onsemi
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Description: MOSFET N-CH 80V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.4 EUR |
10+ | 3.7 EUR |
100+ | 3 EUR |
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Technische Details FDB86366-F085 onsemi
Description: MOSFET N-CH 80V 110A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V, Power Dissipation (Max): 176W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FDB86366-F085 nach Preis ab 2.31 EUR bis 4.49 EUR
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FDB86366-F085 | Hersteller : onsemi / Fairchild |
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auf Bestellung 2300 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB86366-F085 | Hersteller : ON Semiconductor |
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auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB86366-F085 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V Power Dissipation (Max): 176W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
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