![FDB024N04AL7 FDB024N04AL7](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5441/MFG_NOPB.jpg)
FDB024N04AL7 Fairchild Semiconductor
![FAIRS47112-1.pdf?t.download=true&u=5oefqw](/images/adobe-acrobat.png)
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 29849 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
105+ | 4.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB024N04AL7 Fairchild Semiconductor
Description: MOSFET N-CH 40V 100A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V.
Weitere Produktangebote FDB024N04AL7 nach Preis ab 7.15 EUR bis 9.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
FDB024N04AL7 | Hersteller : onsemi / Fairchild |
![]() |
auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
FDB024N04AL7 | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
|
FDB024N04AL7 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
Produkt ist nicht verfügbar |