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FD800R17HP4KB2BOSA2 Infineon Technologies
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Description: IGBT MOD 1700V 800A 5200W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 5200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 1796.33 EUR |
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Technische Details FD800R17HP4KB2BOSA2 Infineon Technologies
Description: IGBT MOD 1700V 800A 5200W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Chopper, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 800A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 800 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 5200 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 65 nF @ 25 V.
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FD800R17HP4KB2BOSA2 | Hersteller : Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 800A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 5200 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 65 nF @ 25 V |
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