FCPF600N60ZL1-F154 onsemi
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Description: MOSFET N-CH 600V 7.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.59 EUR |
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Technische Details FCPF600N60ZL1-F154 onsemi
Description: MOSFET N-CH 600V 7.4A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Not For New Designs, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V.
Weitere Produktangebote FCPF600N60ZL1-F154 nach Preis ab 2.57 EUR bis 5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FCPF600N60ZL1-F154 | Hersteller : onsemi |
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auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF600N60ZL1-F154 | Hersteller : ON Semiconductor |
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