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FCPF190N65FL1-F154

FCPF190N65FL1-F154 onsemi

fcpf190n65fl1-f154-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 20.6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 100 V
auf Bestellung 23847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.17 EUR
50+ 4.1 EUR
100+ 3.52 EUR
500+ 3.44 EUR
Mindestbestellmenge: 4
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Technische Details FCPF190N65FL1-F154 onsemi

Description: MOSFET N-CH 650V 20.6A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: TO-220F-3, Part Status: Not For New Designs, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 100 V.

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FCPF190N65FL1-F154 Hersteller : onsemi FCPF190N65FL1_F154_D-2311645.pdf MOSFETs Power MOSFET, N-Channel, SUPERFET II, FRFET, 650 V, 20.6 A, 190 mohm, TO-220F Ultra narrow lead
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.16 EUR
25+ 4.1 EUR
100+ 3.57 EUR
FCPF190N65FL1-F154 Hersteller : ON Semiconductor fcpf190n65fl1-f154-d.pdf Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Full-Pak Tube
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