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FCP170N60

FCP170N60 Fairchild Semiconductor

FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
85+5.87 EUR
Mindestbestellmenge: 85
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Technische Details FCP170N60 Fairchild Semiconductor

Description: MOSFET N-CH 600V 22A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V.

Weitere Produktangebote FCP170N60 nach Preis ab 5.07 EUR bis 7.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FCP170N60 FCP170N60 Hersteller : onsemi / Fairchild FCP170N60_D-2311978.pdf MOSFET N-Channel SuperFET II MOSFET 600 V, 22 A, 170 mO
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.02 EUR
10+ 5.93 EUR
800+ 5.24 EUR
FCP170N60 FCP170N60 Hersteller : onsemi fcp170n60-d.pdf Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.64 EUR
50+ 6.04 EUR
100+ 5.18 EUR
500+ 5.07 EUR
Mindestbestellmenge: 3
FCP170N60 Hersteller : ONSEMI FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FCP170N60 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
FCP170N60 FCP170N60 Hersteller : ON Semiconductor fcp170n60.pdf Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FCP170N60 FCP170N60 Hersteller : ON Semiconductor fcp170n60.pdf Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar