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FCP13N60N ON Semiconductor
auf Bestellung 493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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71+ | 2.19 EUR |
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Technische Details FCP13N60N ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 258mOhm @ 6.5A, 10V, Power Dissipation (Max): 116W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 100 V.
Weitere Produktangebote FCP13N60N nach Preis ab 2.36 EUR bis 7.48 EUR
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FCP13N60N | Hersteller : ON Semiconductor |
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auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP13N60N | Hersteller : Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 258mOhm @ 6.5A, 10V Power Dissipation (Max): 116W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 100 V |
auf Bestellung 3543 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP13N60N | Hersteller : onsemi / Fairchild |
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auf Bestellung 181 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP13N60N | Hersteller : ON Semiconductor |
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auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
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FCP13N60N | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCP13N60N | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 258mOhm @ 6.5A, 10V Power Dissipation (Max): 116W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 100 V |
Produkt ist nicht verfügbar |