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FCP130N60

FCP130N60 Fairchild Semiconductor

ONSM-S-A0003584702-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
127+4.74 EUR
Mindestbestellmenge: 127
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Technische Details FCP130N60 Fairchild Semiconductor

Description: MOSFET N-CH 600V 28A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V.

Weitere Produktangebote FCP130N60 nach Preis ab 4.26 EUR bis 8.8 EUR

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FCP130N60 FCP130N60 Hersteller : onsemi / Fairchild FCP130N60_D-2312110.pdf MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.76 EUR
10+ 7.73 EUR
50+ 6.55 EUR
100+ 5.53 EUR
250+ 5.07 EUR
500+ 4.93 EUR
800+ 4.26 EUR
FCP130N60 FCP130N60 Hersteller : onsemi fcp130n60-d.pdf Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 15725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+8.8 EUR
10+ 7.39 EUR
100+ 5.98 EUR
800+ 5.31 EUR
1600+ 4.55 EUR
2400+ 4.28 EUR
Mindestbestellmenge: 2
FCP130N60 FCP130N60 Hersteller : ON Semiconductor 3650094738295768fcp130n60.pdf Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
FCP130N60 Hersteller : ONSEMI ONSM-S-A0003584702-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FCP130N60 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
FCP130N60 FCP130N60 Hersteller : ON Semiconductor 3650094738295768fcp130n60.pdf Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220 Tube
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