FCH165N60E onsemi / Fairchild
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.02 EUR |
| 30+ | 5.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCH165N60E onsemi / Fairchild
Description: MOSFET N-CH 600V 23A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V.
Weitere Produktangebote FCH165N60E nach Preis ab 4.84 EUR bis 7.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FCH165N60E | Hersteller : onsemi |
 Description: MOSFET N-CH 600V 23A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.5A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2434 pF @ 380 V |
auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
FCH165N60E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||
 |
FCH165N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247 Mounting: THT Case: TO247 Drain-source voltage: 600V Drain current: 14A On-state resistance: 0.165Ω Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Gate charge: 75nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 69A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
FCH165N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247 Mounting: THT Case: TO247 Drain-source voltage: 600V Drain current: 14A On-state resistance: 0.165Ω Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Gate charge: 75nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 69A |
Produkt ist nicht verfügbar |