FCH070N60E onsemi / Fairchild
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 16.33 EUR |
| 10+ | 15.38 EUR |
| 25+ | 12.87 EUR |
| 100+ | 11.69 EUR |
| 450+ | 10.08 EUR |
| 900+ | 9.26 EUR |
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Technische Details FCH070N60E onsemi / Fairchild
Description: MOSFET N-CH 600V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 26A, 10V, Power Dissipation (Max): 481W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 380 V.
Weitere Produktangebote FCH070N60E nach Preis ab 11.75 EUR bis 16.46 EUR
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FCH070N60E | Hersteller : onsemi |
 Description: MOSFET N-CH 600V 52A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 26A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 380 V |
auf Bestellung 437 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH070N60E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH070N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCH070N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |