auf Bestellung 423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 28.69 EUR |
| 10+ | 26.36 EUR |
| 25+ | 25.08 EUR |
| 50+ | 23.74 EUR |
| 100+ | 22.35 EUR |
| 250+ | 21.58 EUR |
| 450+ | 18.23 EUR |
Produktrezensionen
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Technische Details FCH043N60 onsemi / Fairchild
Description: MOSFET N-CH 600V 75A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 38A, 10V, Power Dissipation (Max): 592W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12225 pF @ 400 V.
Weitere Produktangebote FCH043N60
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| FCH043N60 | Hersteller : ONSEMI |
 Description: ONSEMI - FCH043N60 - Leistungs-MOSFET, n-Kanal, 600 V, 75 A, 0.037 ohm, TO-247Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 75 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 592 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: SUPERFET II Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.037 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 3.5 SVHC: Lead (17-Jan-2022) |
auf Bestellung 406 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH043N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 75A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH043N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 75A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH043N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47.5A; Idm: 225A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47.5A Pulsed drain current: 225A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 163nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH043N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 38A, 10V Power Dissipation (Max): 592W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12225 pF @ 400 V |
Produkt ist nicht verfügbar |
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| FCH043N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47.5A; Idm: 225A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47.5A Pulsed drain current: 225A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 163nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |