![FCB070N65S3 FCB070N65S3](https://www.mouser.com/images/onsemiconductor/lrg/to-263.jpg)
auf Bestellung 2931 Stücke:
Lieferzeit 108-112 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.96 EUR |
10+ | 8.54 EUR |
25+ | 7.74 EUR |
100+ | 7.11 EUR |
250+ | 6.69 EUR |
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Technische Details FCB070N65S3 onsemi / Fairchild
Description: MOSFET N-CH 650V 44A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4.4mA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V.
Weitere Produktangebote FCB070N65S3
Foto | Bezeichnung | Hersteller | Beschreibung |
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FCB070N65S3 | Hersteller : ON Semiconductor |
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FCB070N65S3 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCB070N65S3 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCB070N65S3 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Mounting: SMD Drain-source voltage: 650V Drain current: 44A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 312W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Case: D2PAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCB070N65S3 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
Produkt ist nicht verfügbar |
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FCB070N65S3 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
Produkt ist nicht verfügbar |
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FCB070N65S3 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Mounting: SMD Drain-source voltage: 650V Drain current: 44A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 312W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Case: D2PAK |
Produkt ist nicht verfügbar |