F4100R12KS4BOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 130A 660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Description: IGBT MOD 1200V 130A 660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 370.94 EUR |
10+ | 347.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details F4100R12KS4BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 130A 660W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Active, Current - Collector (Ic) (Max): 130 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 660 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V.
Weitere Produktangebote F4100R12KS4BOSA1 nach Preis ab 373.61 EUR bis 373.61 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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F4100R12KS4BOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 130A 660W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 660 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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F4100R12KS4BOSA1 Produktcode: 162575 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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F4100R12KS4BOSA1 | Hersteller : Infineon Technologies | Trans IGBT Module N-CH 1200V 130A 660W 26-Pin ECONO3-4 Tray |
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