ESH3D-E3/57T Vishay General Semiconductor
auf Bestellung 3805 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 1.04 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.57 EUR |
| 850+ | 0.56 EUR |
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Technische Details ESH3D-E3/57T Vishay General Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 3A; 55ns; DO214AB,SMC; Ufmax: 0.9V, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 200V, Load current: 3A, Reverse recovery time: 55ns, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated; ultrafast switching, Capacitance: 70pF, Max. forward voltage: 0.9V, Case: DO214AB; SMC, Kind of package: reel; tape, Leakage current: 0.15mA, Max. forward impulse current: 125A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ESH3D-E3/57T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ESH3D-E3/57T | Hersteller : VISHAY |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 55ns; DO214AB,SMC; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 55ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 70pF Max. forward voltage: 0.9V Case: DO214AB; SMC Kind of package: reel; tape Leakage current: 0.15mA Max. forward impulse current: 125A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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ESH3D-E3/57T | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
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ESH3D-E3/57T | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214AB |
Produkt ist nicht verfügbar |
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ESH3D-E3/57T | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 55ns; DO214AB,SMC; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 55ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 70pF Max. forward voltage: 0.9V Case: DO214AB; SMC Kind of package: reel; tape Leakage current: 0.15mA Max. forward impulse current: 125A |
Produkt ist nicht verfügbar |