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ESD9BL24P DIOTEC SEMICONDUCTOR
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Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 350W; 26÷30V; 1A; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Breakdown voltage: 26...30V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Anzahl je Verpackung: 10000 Stücke
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Technische Details ESD9BL24P DIOTEC SEMICONDUCTOR
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 350W; 26÷30V; 1A; bidirectional; DFN1006-2,SOD882, Type of diode: TVS, Peak pulse power dissipation: 0.35kW, Max. off-state voltage: 24V, Breakdown voltage: 26...30V, Max. forward impulse current: 1A, Semiconductor structure: bidirectional, Case: DFN1006-2; SOD882, Mounting: SMD, Leakage current: 0.5µA, Kind of package: reel; tape, Features of semiconductor devices: ESD protection, Capacitance: 35pF, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote ESD9BL24P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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ESD9BL24P | Hersteller : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 35pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SOD-882 (DFN1006-2) Bidirectional Channels: 1 Voltage - Breakdown (Min): 26V Voltage - Clamping (Max) @ Ipp: 60V Power - Peak Pulse: 350W Power Line Protection: No |
Produkt ist nicht verfügbar |
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ESD9BL24P | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |
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ESD9BL24P | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Diode: TVS; 350W; 26÷30V; 1A; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 24V Breakdown voltage: 26...30V Max. forward impulse current: 1A Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 35pF |
Produkt ist nicht verfügbar |