ES3GBHR5G Taiwan Semiconductor
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Technische Details ES3GBHR5G Taiwan Semiconductor
Description: DIODE GEN PURP 400V 3A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 41pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Qualification: AEC-Q101.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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ES3GBHR5G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 41pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Qualification: AEC-Q101 |
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ES3GBHR5G | Hersteller : Taiwan Semiconductor | Rectifiers 35ns 3A 400V Super F ast Recovery Rect |
Produkt ist nicht verfügbar |