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ES3G-E3/9AT VISHAY
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Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 50ns; DO214AB,SMC; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 15pF
Case: DO214AB; SMC
Max. forward voltage: 1.1V
Max. forward impulse current: 100A
Leakage current: 0.35mA
Kind of package: reel; tape
auf Bestellung 3442 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
280+ | 0.26 EUR |
310+ | 0.23 EUR |
410+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ES3G-E3/9AT VISHAY
Description: DIODE GEN PURP 400V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Weitere Produktangebote ES3G-E3/9AT nach Preis ab 0.17 EUR bis 1.02 EUR
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ES3G-E3/9AT | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 400V; 3A; 50ns; DO214AB,SMC; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 15pF Case: DO214AB; SMC Max. forward voltage: 1.1V Max. forward impulse current: 100A Leakage current: 0.35mA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3442 Stücke: Lieferzeit 7-14 Tag (e) |
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ES3G-E3/9AT | Hersteller : Vishay |
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auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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ES3G-E3/9AT | Hersteller : Vishay |
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auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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ES3G-E3/9AT | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
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ES3G-E3/9AT | Hersteller : Vishay General Semiconductor |
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auf Bestellung 1949 Stücke: Lieferzeit 10-14 Tag (e) |
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ES3G-E3/9AT | Hersteller : Vishay |
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auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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ES3G-E3/9AT | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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ES3G-E3/9AT | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |