ES2GHE3_A/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 300V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
auf Bestellung 28500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 750+ | 0.28 EUR |
| 1500+ | 0.24 EUR |
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Technische Details ES2GHE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote ES2GHE3_A/H nach Preis ab 0.25 EUR bis 1 EUR
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ES2GHE3_A/H | Hersteller : Vishay General Semiconductor |
Rectifiers 2A,400V,35ns, SMB F.EFF.SM DIODE |
auf Bestellung 42881 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2GHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 29675 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2GHE3_A/H | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DO214AA; SMB Max. forward impulse current: 50A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 736 Stücke: Lieferzeit 7-14 Tag (e) |
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ES2GHE3_A/H | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 2A; 35ns; DO214AA,SMB; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Case: DO214AA; SMB Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 736 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2GHE3_A/H | Hersteller : Vishay |
Rectifier Diode Switching 400V 2A 50ns Automotive AEC-Q101 2-Pin SMB T/R |
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ES2GHE3_A/H | Hersteller : Vishay |
Rectifier Diode Switching 400V 2A 50ns Automotive 2-Pin SMB T/R |
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