EGP10K Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2616+ | 0.18 EUR |
Produktrezensionen
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Technische Details EGP10K Fairchild Semiconductor
Description: DIODE GEN PURP 800V 1A DO204AL, Packaging: Bulk, Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Weitere Produktangebote EGP10K nach Preis ab 0.18 EUR bis 0.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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EGP10K | Hersteller : onsemi |
Description: DIODE GEN PURP 800V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
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EGP10K | Hersteller : onsemi / Fairchild | Rectifiers 1A Rectifier UF Recovery |
auf Bestellung 95 Stücke: Lieferzeit 10-14 Tag (e) |
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EGP10K | Hersteller : ONSEMI |
Description: ONSEMI - EGP10K - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 19000 Stücke: Lieferzeit 14-21 Tag (e) |
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EGP10K Produktcode: 106955 |
Verschiedene Bauteile > Other components 3 |
Produkt ist nicht verfügbar
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EGP10K | Hersteller : ON Semiconductor | Rectifier Diode Switching 800V 1A 75ns 2-Pin DO-41 T/R |
Produkt ist nicht verfügbar |
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EGP10K | Hersteller : ON Semiconductor | Diode Switching 800V 1A 2-Pin DO-41 T/R |
Produkt ist nicht verfügbar |
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EGP10K | Hersteller : onsemi |
Description: DIODE GEN PURP 800V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |