Technische Details EGP10D-E3/73 Vishay
Description: DIODE GEN PURP 200V 1A DO204AL, Packaging: Tape & Box (TB), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 22pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote EGP10D-E3/73
Foto | Bezeichnung | Hersteller | Beschreibung |
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EGP10D-E3/73 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 22pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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EGP10D-E3/73 | Hersteller : Vishay General Semiconductor | Rectifiers 200 Volt 1.0A 50ns Glass Passivated |
Produkt ist nicht verfügbar |