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EFC4K105NUZTDG

EFC4K105NUZTDG onsemi

EFC4K105NUZ_D-2311049.pdf Hersteller: onsemi
MOSFET Dual NCH 22V 25A
auf Bestellung 4446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.37 EUR
10+ 1.13 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.57 EUR
5000+ 0.55 EUR
10000+ 0.54 EUR
Mindestbestellmenge: 3
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Technische Details EFC4K105NUZTDG onsemi

Description: MOSFET 2N-CH 22V 25A 10WLCSP, Packaging: Tape & Reel (TR), Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), Drain to Source Voltage (Vdss): 22V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: 10-WLCSP (3.4x1.96).

Weitere Produktangebote EFC4K105NUZTDG nach Preis ab 0.57 EUR bis 1.37 EUR

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EFC4K105NUZTDG EFC4K105NUZTDG Hersteller : onsemi efc4k105nuz-d.pdf Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.37 EUR
16+ 1.12 EUR
100+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.6 EUR
2000+ 0.57 EUR
Mindestbestellmenge: 13
EFC4K105NUZTDG EFC4K105NUZTDG Hersteller : onsemi efc4k105nuz-d.pdf Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
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