EFC2K103NUZTDG onsemi
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Description: MOSFET 2N-CH 12V 40A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.54x1.77)
Part Status: Last Time Buy
auf Bestellung 1877 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.88 EUR |
12+ | 1.54 EUR |
100+ | 1.2 EUR |
500+ | 1.02 EUR |
1000+ | 0.83 EUR |
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Technische Details EFC2K103NUZTDG onsemi
Description: MOSFET 2N-CH 12V 40A 10WLCSP, Packaging: Tape & Reel (TR), Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: 10-WLCSP (3.54x1.77), Part Status: Last Time Buy.
Weitere Produktangebote EFC2K103NUZTDG nach Preis ab 1.3 EUR bis 2.24 EUR
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EFC2K103NUZTDG | Hersteller : onsemi |
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auf Bestellung 10367 Stücke: Lieferzeit 10-14 Tag (e) |
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EFC2K103NUZTDG | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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EFC2K103NUZTDG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 10-WLCSP (3.54x1.77) Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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EFC2K103NUZTDG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 10-WLCSP (3.54x1.77) Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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EFC2K103NUZTDG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 6V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 10-WLCSP (3.54x1.77) Part Status: Last Time Buy |
Produkt ist nicht verfügbar |