![ECH8660-TL-H ECH8660-TL-H](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/922/8-ECH.jpg)
ECH8660-TL-H onsemi
![ech8660-d.pdf](/images/adobe-acrobat.png)
Description: MOSFET N/P-CH 30V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 1083 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.07 EUR |
20+ | 0.93 EUR |
100+ | 0.64 EUR |
500+ | 0.54 EUR |
1000+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ECH8660-TL-H onsemi
Description: MOSFET N/P-CH 30V 4.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V, Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH, Part Status: Active.
Weitere Produktangebote ECH8660-TL-H nach Preis ab 0.73 EUR bis 1.14 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
ECH8660-TL-H | Hersteller : onsemi |
![]() |
auf Bestellung 3635 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
ECH8660-TL-H | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH Part Status: Active |
Produkt ist nicht verfügbar |