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ECH8411-TL-E

ECH8411-TL-E onsemi


Hersteller: onsemi
Description: MOSFET N-CH 20V 9A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4A, 4V
Power Dissipation (Max): 1.4W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 10 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1480+0.35 EUR
Mindestbestellmenge: 1480
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Technische Details ECH8411-TL-E onsemi

Description: MOSFET N-CH 20V 9A 8ECH, Packaging: Bulk, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 4A, 4V, Power Dissipation (Max): 1.4W (Ta), Supplier Device Package: 8-ECH, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 10 V.

Weitere Produktangebote ECH8411-TL-E

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ECH8411-TL-E ECH8411-TL-E Hersteller : ONSEMI ECH8411.pdf Description: ONSEMI - ECH8411-TL-E - N-CHANNEL SILICON MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)