DZ600N18KHPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 600A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Description: DIODE GEN PURP 1.8KV 600A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 365.39 EUR |
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Technische Details DZ600N18KHPSA1 Infineon Technologies
Description: DIODE GEN PURP 1.8KV 600A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 600A, Supplier Device Package: Module, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1800 V, Current - Reverse Leakage @ Vr: 40 mA @ 1800 V.
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