DXTN10060DFJBWQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 4A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
Description: TRANS NPN 60V 4A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
6000+ | 0.25 EUR |
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Technische Details DXTN10060DFJBWQ-7 Diodes Incorporated
Description: TRANS NPN 60V 4A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V, Frequency - Transition: 125MHz, Supplier Device Package: W-DFN2020-3 (Type A), Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.
Weitere Produktangebote DXTN10060DFJBWQ-7 nach Preis ab 0.25 EUR bis 0.76 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DXTN10060DFJBWQ-7 | Hersteller : Diodes Incorporated | Bipolar Transistors - BJT SS Low Sat Transist |
auf Bestellung 2441 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTN10060DFJBWQ-7 | Hersteller : Diodes Incorporated |
Description: TRANS NPN 60V 4A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V Frequency - Transition: 125MHz Supplier Device Package: W-DFN2020-3 (Type A) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W |
auf Bestellung 11445 Stücke: Lieferzeit 10-14 Tag (e) |
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