auf Bestellung 405000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DXT5551P5Q-13 Diodes Zetex
Description: PWR HI VOLTAGE TRANSISTOR PDI5, Packaging: Tape & Reel (TR), Package / Case: PowerDI™ 5, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 130MHz, Supplier Device Package: PowerDI™ 5, Grade: Automotive, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 2.25 W, Qualification: AEC-Q101.
Weitere Produktangebote DXT5551P5Q-13 nach Preis ab 0.28 EUR bis 1.13 EUR
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DXT5551P5Q-13 | Hersteller : Diodes Incorporated |
 Description: PWR HI VOLTAGE TRANSISTOR PDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Grade: Automotive Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 2.25 W Qualification: AEC-Q101 |
auf Bestellung 410000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT5551P5Q-13 | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT Pwr Hi Voltage Transistor PDI5 T&R 5K |
auf Bestellung 6153 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT5551P5Q-13 | Hersteller : Diodes Incorporated |
Description: PWR HI VOLTAGE TRANSISTOR PDI5 Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Grade: Automotive Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 2.25 W Qualification: AEC-Q101 |
auf Bestellung 413993 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT5551P5Q-13 | Hersteller : Diodes Zetex |
NPN High Voltage Transistor Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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DXT5551P5Q-13 | Hersteller : Diodes Inc |
NPN High Voltage Transistor Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| DXT5551P5Q-13 | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 2.25W; PowerDI®5 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 2.25W Case: PowerDI®5 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry Quantity in set/package: 5000pcs. Frequency: 130MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DXT5551P5Q-13 | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 2.25W; PowerDI®5 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 2.25W Case: PowerDI®5 Current gain: 30...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry Quantity in set/package: 5000pcs. Frequency: 130MHz |
Produkt ist nicht verfügbar |