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DTD513ZETL Rohm Semiconductor
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Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
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Technische Details DTD513ZETL Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Supplier Device Package: EMT3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 150 mW, Frequency - Transition: 260 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTD513ZETL nach Preis ab 0.072 EUR bis 0.74 EUR
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DTD513ZETL | Hersteller : Rohm Semiconductor |
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auf Bestellung 28169 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD513ZETL | Hersteller : Rohm Semiconductor |
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auf Bestellung 5775 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD513ZETL | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 10061 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD513ZETL | Hersteller : ROHM Semiconductor |
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auf Bestellung 1060 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD513ZETL | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 140 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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DTD513ZETL | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 140 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |