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DTD123EKT146 Rohm Semiconductor
auf Bestellung 187642 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1309+ | 0.12 EUR |
1419+ | 0.11 EUR |
1462+ | 0.099 EUR |
2000+ | 0.092 EUR |
3000+ | 0.088 EUR |
6000+ | 0.081 EUR |
12000+ | 0.075 EUR |
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Technische Details DTD123EKT146 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V, Supplier Device Package: SMT3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Weitere Produktangebote DTD123EKT146 nach Preis ab 0.16 EUR bis 0.72 EUR
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DTD123EKT146 | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD123EKT146 | Hersteller : Rohm Semiconductor |
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auf Bestellung 3772 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD123EKT146 | Hersteller : Rohm Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD123EKT146 | Hersteller : ROHM Semiconductor |
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auf Bestellung 4282 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD123EKT146 | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 7970 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD123EK T146 | Hersteller : ROHM | SOT23 |
auf Bestellung 850 Stücke: Lieferzeit 21-28 Tag (e) |
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DTD123EKT146 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 39 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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DTD123EKT146 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 39 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
Produkt ist nicht verfügbar |