DTC123EUAT106 Rohm Semiconductor
auf Bestellung 6031 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3022+ | 0.051 EUR |
| 3040+ | 0.049 EUR |
| 3068+ | 0.046 EUR |
| 6000+ | 0.044 EUR |
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Technische Details DTC123EUAT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Supplier Device Package: UMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Weitere Produktangebote DTC123EUAT106 nach Preis ab 0.069 EUR bis 0.46 EUR
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DTC123EUAT106 | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 200MW UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: UMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123EUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: UMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123EUAT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R |
auf Bestellung 698 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EUAT106 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased NPN 50V 100MA SOT-323 |
auf Bestellung 8819 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC123EUA-T106 |
auf Bestellung 706 Stücke: Lieferzeit 21-28 Tag (e) |